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2SC4139 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4139 500 400 10 15(Pulse30) 5 120(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=8A IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=12V, IE=-1.5A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 85typ (Ta=25C) 2SC4139 Unit A A V V MHz pF 20.0min 19.90.3 4.0 a b o3.20.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 25 IC (A) 8 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.8 IB2 (A) -1.6 ton (s) 1max tstg (s) 3max tf (s) 0.5max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. I C - VCE Characteristics (Typical) 15 1. 5A VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) (I C/ IB=5) 1.5 I C - VBE Temperature Characteristics (Typical) 10 (VCE=4V) 1 .2 A 800 mA Collector Current I C (A) 600mA 8 V B E( sat) 1.0 -55C (Cas ase 25C (C 125C 10 e Temp) Temp) Temp ) em p) C eT Collector Current I C (A) 6 mp) 400m A Temp (Case 25C ) 25 125 as C ( 5 I B= 100mA 12 5 C ( 2 5 -5 C VCE(sat) 0 0.03 0.05 0.1 0.5 1 5 0 0 1 2 3 4 10 20 0 0 0.2 0.4 0.6 0.8 -55C C (Case 200mA 0.5 Cas (Case 4 Temp) e Te 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 8 j-a(C/W) hFE - IC Characteristics (Typical) 125C DC C urrent G ain h FE t on *t stg * t f - I C Characteristics (Typical) ton*t s t g*t f( s) 5 t s tg VCC 200V IC:IB1:I B2= 10:1:-2 1 0.5 ton j-a - t Characteristics 2 25C -55C Transient Thermal Resistance 1 10 Sw it ching Time 0.5 tf 0.1 0.5 1 5 Collector Current I C( A) 10 15 5 0.02 0.05 0.1 0.5 1 5 10 15 0.1 1 10 Time t(ms) 100 1000 Collector Current I C( A) Safe Operating Area (Single Pulse) 50 50 Reverse Bias Safe Operating Area 120 P c - T a Derating Ma xim um Powe r Dissipat io n P C( W) 10 0 s 100 W ith Collect or Cur ren t I C( A) Collector Curr ent I C (A) In fin 10 10 ite he at si nk 5 Without Heatsink Natural Cooling 5 Without Heatsink Natural Cooling L=3mH IB2=-1A Duty:less than 1% 50 1 5 10 50 100 500 Collector-Emitter Voltage V C E( V) 1 5 10 50 100 500 3.5 Without Heatsink 0 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 91 |
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